Ntd3055l104g on semiconductor mosfets distributors. Tip120, tip121, tip122, npn epitaxial darlington transistor created date. Toshiba field effect transistor silicon n channel mos type. No license is granted by implication or otherwise under any patent. Toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. The toshiba tlp5211, 2 and 4 consist of a phototransistor optically coupled. Page 2 of 4 electrical characteristics t ambient25. Pdf 2n3055, mj2955 2n3055d mj2955 300 watts amplifier circuit. Toshiba emmc module, thgbmhg6c1lbail datasheet, thgbmhg6c1lbail circuit, thgbmhg6c1lbail data sheet.
Toshiba bicd integrated circuit silicon monolithic. Stmicroelectronics preferred salestypes complementary npnpnp devices. Toshiba transistor silicon npn epitaxial type pct process, rn1202 datasheet, rn1202 circuit, rn1202 data sheet. Mosfet power, nchannel, logic level, dpakipak 12 a, 60 v. Sep 26, 2018 2n3055 datasheet pdf 15 a, 60 v npn bipolar power transistor, 2n3055 pdf, 2n3055 pinout, substitute, equivalent, data, circuit, output. Ucc2751x singlechannel, highspeed, lowside gate driver. May 19, 2010 hello, i purchased some 2n3055 transistors through ebay today and they were manufactured in india by continental device india limited.
Tip120 tip121 tip122 npn epitaxial darlington transistor keywords. Complementary silicon power transistors datasheet catalog. Full datasheet s20c40 manufactirer mospec, rectifier diodes archive 1. Pdf 2n3055 mj2955 40vdc 2n3055 2n3055 pin hfe 2n3055 2n3055 amplifier 2n3055 specification 2n3055 ic mj2955 2n3055 datasheet 2n3055 complement 2n3055 silicon. Octopart is the worlds source for ntd3055l104g availability, pricing, and technical specs and other electronic parts. These parameters must be measured using voltagesensing contacts, separate from the current carrying contacts. Internal schematic diagram october1995 absolute maximum ratings symbol. Unit conditions vceosus collectoremitter sustaing voltage 60 v ic200ma, ib0 vcersus collectoremitter sustaing voltage 70 v ic200ma, rbe100. Toshiba, alldatasheet, datasheet, datasheet search site for electronic. How to test 2n3055 electronics forum circuits, projects. The study of the following relevant acronyms is a must for all electronic students. Power dissipation 25c dc current gain hfe 4 a vce sat 1.
Buy transistor 2n3055 npn power bi polar expitaxial base toggle navigation jameco. Thgbmhg6c1lbail datasheetpdf toshiba semiconductor. Mosfet power, nchannel, logic level, dpakipak 12 a, 60 v designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Toshiba, alldatasheet, datasheet, datasheet search site for. Toshiba discrete semiconductors transistor silicon pnp epitaxial type pct process for general p. Find the best pricing for on semiconductor ntd3055l104g by comparing bulk discounts from 3 distributors. Transistor gain given hfe is only an approximate value. Tbd62003a series, tbd62004a series toshiba electronic devices. It is intended for power switching circuits, series. Ltd 1 qwr205004,a silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case. Tip35c, 36c complementary power transistors page 4 310505 v1. Transistor pin outs for low to medium power type transistors viewed from below.
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Obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. Deflection, class b sound output applications, 2sc2383 datasheet, 2sc2383 circuit, 2sc2383 data sheet. Complementary silicon power transistors stmicroelectronics preferred salestypes complementary npnpnp devices description the 2n3055 is a silicon epitaxialbase planar npn transistor mounted in jedec to3 metal case. Pricing and availability on millions of electronic components from digikey electronics. Connection diagrams typical applications required if regulator is separated from filter capacitor by more than 3. It will be awhile before i will have all of the components to build the target project so i would like to know how to test the 2n3055 transistors.
These devices can also be used in power switching circuits such as converters or inverters. Transistor 2n3055 npn power bi polar expitaxial base. Tip120 tip121 tip122 npn epitaxial darlington transistor author. Complementary silicon highpower transistors these powerbase complementary transistors are designed for high power audio, stepping motor and other linear applications. Packaging section of the datasheet for thermal limitations and considerations of packages. Features lower rdson lower vdson tighter vsd specification lower diode reverse recovery time lower reverse recovery stored.
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